Semiconductor memory device capable of preventing

专利名称：Semiconductor memory device capable of

preventing malfunction due to disconnectionof column select line or word select line

发明人：Okimoto, Hiromi,Hayashikoshi,

Masanori,Tobita, Youichi

申请号：EP97103040.8申请日：19970225公开号：EP0793176A3公开日：19970917

专利附图：

摘要：A column select line (CSL) includes a first layer column select line (CSLB) and asecond layer column select line (CSLA) formed above the first layer column select line(CSLB) and connected thereto at any point. Furthermore, clamping circuits (7, 9) each forclamping each word line of paired main word lines (MWL, /MWL) at a constant potentialare provided in a semiconductor memory device having main and secondary word linestructure. With such a structure, malfunction due to multiselection of memory cells can

be avoided even when the column select line (CSL) or the paired main word lines (MWL,/MWL) is disconnected.

申请人：MITSUBISHI DENKI KABUSHIKI KAISHA

地址：2-3, Marunouchi 2-chome Chiyoda-ku Tokyo 100 JP

国籍：JP

代理机构：Prüfer, Lutz H., Dipl.-Phys.

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