1700 SHAMES DRIVE, WESTBURY, NY 11590 TEL: 516-334-8700 • FAX: 516-334-8771E-MAIL: info@spraguegoodman.com
元器件交易网www.cecb2b.com
VARACTOR DIODESSG-950SUPER HYPERABRUPT TUNING VARACTOR DIODESFEATURES• Mesa epitaxial silicon construction• Silicon dioxide passivated• Superior mid range linear characteristics• High tuning ratios• High Q• Available in common cathode style• Available in chip form (add suffix -000)• Low voltage wireless phase locked loop VCOs• Phase shiftersSPECIFICATIONSReverse breakdown voltage at 10 µA DC (at 25°C): 12 V minMaximum reverse leakage current at –10 V (at 25°C): 0.05 µA DCDevice dissipation at 25°C: 250 mW (deratedlinearly to zero at +125°C)Operating junction temperature: –55°C to +125°CStorage temperature: –55°C to +125°CAPPLICATIONS• TCXOs, VCXOs• Low voltage wireless open loop VCOsTotalCapacitanceCT(pF) at –2 Vmin maxTotalCapacitanceCT(pF) at –7 VtypTotalCapacitanceCT(pF) at –10 Vmin maxQ minat –2 V(10 MHz)Model NumberSingleCommonCathode46 68 6.1 4.2 5.2 75 GVD1401-001 —100 150 13.0 8.6 10.6 50 GVD1404-001 —3TOP VIEW30.031TYP0.800.035TYP0.9050012(SINGLE)12(COMMON CATHODE)0.115 ± 0.0052.93 ± 0.130.0792.01000.038 ± 0.0030.96 ± 0.0650.0370.950.0370.95PAD LAYOUT0.091 ± 0.0082.3 ± 0.20.051 ± 0.0041.3 ± 0.1CT (pF)500.021 ± 0.0030.53 ± 0.080.075 ± 0.0051.91 ± 0.130.040 ± 0.0071.03 ± 0.18GVD1401-00110GVD1404-0010.016 ± 0.0020.41 ± 0.04TYP0.007 ± 0.0030.18 ± 0.080.0047 ± 0.00130.12 ± 0.033TYP50.512345610203050REVERSE VOLTAGE(VOLTS)SOT-23 PACKAGE - Consult factory for additional package configurations.All dimensions are in /mm.Unless otherwise specified, the tolerance on dimensions is ±0.004/0.1.2
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE,WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@spraguegoodman.com元器件交易网www.cecb2b.com
VARACTOR DIODESSG-950SUPER HYPERABRUPT TUNING VARACTOR DIODESFEATURES• Mesa epitaxial silicon construction• Low voltage wireless phase locked loop VCOs• Silicon dioxide passivated• Phase shifters• Superior mid range linear characteristicsSPECIFICATIONS• High tuning ratiosReverse breakdown voltage at 10 µA DC • High Q(at 25°C): 12 V min• Available in common cathode StyleMaximum reverse leakage current at –10 V • Available in chip form (add suffix -000)(at 25°C): 0.05 µA DCAPPLICATIONSDevice dissipation at 25°C: 250 mW (deratedlinearly to zero at +125°C)• TCXOs, VCXOsOperating junction temperature: –55°C to +125°C• Low voltage wireless open loop VCOsStorage temperature: –55°C to +125°CCapacitanceCapacitanceTotalRatioRatioModel NumberCapacitanceCTat –1 VCTat –1 VQ minCT(pF) at –1 VCTat –3 VCTat –6 Vat –4 VCommonminmaxmin maxmin max(50 MHz)SingleCathode3.003.601.41.92.63.31500 GVD20433-001GVD20433-0045.857.151.62.02.83.41200GVD20434-001GVD20434-00410.3512.651.62.02.93.41000GVD20435-001GVD20435-00415.5018.501.62.03.03.5900GVD20436-001GVD20436-00445.0054.001.62.03.03.5750GVD20437-001--- 3TOP VIEW30.0310.80TYP100.00.0350.90TYP50.01212(SINGLE)(COMMON CATHODE)0.0792.00.115 ± 0.005CT (pF)2.93 ± 0.130.038 ± 0.0030.96 ± 0.0650.03710.00.950.091 ± 0.0080.051 ± 0.0040.0375.02.3 ± 0.21.3 ± 0.10.95GVD20436-0013.0GVD20435-001PAD LAYOUT2.00.021 ± 0.0030.075 ± 0.005GVD20434-0010.53 ± 0.081.91 ± 0.130.040 ± 0.0071.01.03 ± 0.180.50.016 ± 0.0020.30.5123456102030500.41 ± 0.040.0047 ± 0.0013TYP0.007 ± 0.0030.12 ± 0.0330.18 ± 0.08TYPREVERSE VOLTAGE(VOLTS)SOT-23 PACKAGE - Consult factory for additional package configurations.All dimensions are in /mm.Unless otherwise specified, the tolerance on dimensions is ±0.004/0.1.SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE,WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@spraguegoodman.com3
元器件交易网www.cecb2b.com
VARACTOR DIODESSG-950SUPER HYPERABRUPT TUNING VARACTOR DIODESFEATURES• Mesa epitaxial silicon construction• Silicon dioxide passivated• Superior mid range linear characteristics• High tuning ratios• High Q• Available in common cathode style• Available in chip form (add suffix -000)• Low voltage wireless phase locked loop VCOs• Phase shiftersSPECIFICATIONSReverse breakdown voltage at 10 µA DC (at 25°C): 12 V minMaximum reverse leakage current at –10 V (at 25°C): 0.05 µA DCDevice dissipation at 25°C: 250 mW (deratedlinearly to zero at +125°C)Operating junction temperature: –55°C to +125°CStorage temperature: –55°C to +125°CAPPLICATIONS• TCXOs, VCXOs• Low voltage wireless open loop VCOsTotalCapacitanceCT(pF) at –1 Vmin13.013.017.017.026.026.036.036.0TotalCapacitanceCT(pF) at –2.5 Vmin max6.56.58.58.513.013.018.018.010.010.013.013.020.020.027.027.0TotalCapacitanceCT(pF) at –8 Vmax2.72.73.23.24.74.76.26.2Q minat –4 V(50 MHz)750350600300500225400150Model NumberSingleGVD20442-001GVD20443-001GVD20444-001GVD20445-001GVD20446-001GVD20447-001GVD20448-001GVD20449-001CommonCathodeGVD20442-004GVD20443-004GVD20444-004GVD20445-004------------TotalCapacitanceCT(pF) at –1 Vmin9.0TotalCapacitanceCT(pF) at –2.5 Vmin max4.56.5TotalCapacitanceCT(pF) at –4 Vmax3.0Q minat –4 V(50 MHz)400Model NumberSingleGVD20450-001CommonCathodeGVD20450-0043TOP VIEW30.031TYP0.800.035TYP0.9050.012(SINGLE)12(COMMON CATHODE)0.115 ± 0.0052.93 ± 0.130.0792.010.00.0370.950.038 ± 0.0030.96 ± 0.065CT (pF)5.0GVD20448-0013.02.0GVD20446-001GVD20444-0010.091 ± 0.0082.3 ± 0.20.051 ± 0.0041.3 ± 0.10.0370.95PAD LAYOUT0.021 ± 0.0030.53 ± 0.080.075 ± 0.0051.91 ± 0.130.040 ± 0.0071.03 ± 0.181.0GVD20450-0010.50.016 ± 0.0020.41 ± 0.04TYP0.30.007 ± 0.0030.18 ± 0.080.0047 ± 0.00130.12 ± 0.033TYP0.512345610203050REVERSE VOLTAGE(VOLTS)SOT-23 PACKAGE - Consult factory for additional package configurations.All dimensions are in /mm.Unless otherwise specified, the tolerance on dimensions is ±0.004/0.1.4
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE,WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@spraguegoodman.com元器件交易网www.cecb2b.com
VARACTOR DIODESSG-950
SUPER HYPERABRUPT TUNING VARACTOR DIODES
Surface Mount Low Parasitic Package (SMLP)
FEATURES
APPLICATIONS
• Mesa epitaxial silicon construction• PCS• WANS• DECT• Silicon dioxide passivated
• GSM• TAGS
• AMPS
• Fits footprint for SOD-323, SOD-123 and smaller• Cellular
• High frequency (VHF to 8 GHz)SPECIFICATIONS
• Available on carrier and reel
Reverse breakdown voltage at 10 µA DC • Available in chip form (add suffix -000)(at 25°C): 12 V min
• Two package styles including lower cost, flat Maximum reverse leakage current at –10 V top version
(at 25°C): 0.05 µA DC
• Alternate notched termination version available,Device dissipation at 25°C: 250 mW (deratedcontact factory for outline drawing
linearly to zero at +125°C)Operating junction temperature: –65°C to +125°C
Storage temperature: –65°C to +125°C
Total
Total
Total
Total
CapacitanceCapacitanceCapacitanceCapacitanceQ minCT(pF) at –1 V
CT(pF) at –2.5 VCT(pF) at –4 V
CT(pF) at –8 V
at –4 VModel minmin maxmaxmax(50 MHz)Number*36.018.027.012.06.2400GVD90001 –___26.013.020.09.04.7500GVD90002 –___17.08.513.06.03.2600GVD90003 –___13.06.510.04.52.7750GVD90004 –___9.04.56.53.01.7900GVD90005 –___4.02.03.01.51.01200GVD90006 –___1.81.11.50.80.551400GVD90007 –___1.20.81.10.60.451600GVD90008 –___0.6
0.50.8
0.4
0.35
1800
GVD90009 –_
__
*For complete model number, select “Dash No.” from chart below.
DashTERMINATIONS (GOLD PLATED)ABC1C2DKLMDOT INDICATESNo.CATHODE ENDB- 0110.100.0500.0350.0500.015 ±0.0040.0300.0700.112D TYPA- 1112.51.30.891.30.38 ±0.10.761.82.84BOTTOM VIEWTOP VIEW- 0120.120.0600.0350.0500.020 ±0.0050.0300.0800.132- 1123.01.50.891.30.51 ±0.10.762.03.35EPOXYK TYPENCAPSULANTC1- 0130.2000.1000.0350.0500.020 ±0.0050.0300.1200.212L- 1135.082.540.891.30.51 ±0.10.763.055.38SIDE VIEW FOR - 01__- 0140.0750.0500.0350.0500.015 ±0.0040.0300.0700.087MEPOXY0.38 ±0.1MOUNTING PAD LAYOUTENCAPSULANTC2- 1141.91.30.891.30.761.82.2- 0150.0620.0420.0300.0500.011 ±0.0030.0200.0600.072SIDE VIEW FOR - 11__- 1151.61.10.761.30.28 ±0.080.511.51.8All dimensions are in /mm.
Unless otherwise specified, the tolerance on dimensions is ±0.003/0.08.
Note: An SMLP package with three terminations sized to fit the pad layout for an SOT-23 package is also available. This
package can be used for multiple diode designs (such as common cathode or common anode). Contact factoryfor the three-terminal SMLP outline drawing, and for further information on the multiple diode configurations.
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE,WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@spraguegoodman.com5
元器件交易网www.cecb2b.com
VARACTOR DIODESSG-950
WIDEBAND HYPERABRUPT TUNING VARACTOR DIODES
Microwave Hyperabrupt Series
FEATURES
• Mesa epitaxial silicon construction• Silicon dioxide passivated
• Superior wide range linear characteristics• High tuning ratios• High Q
• Available in common cathode style• Available in chip form (add suffix -000)
• High linearity VCOs• Phase shifters
SPECIFICATIONS
Reverse breakdown voltage at 10 µA DC (at 25°C): 20 V min
Maximum reverse leakage current at –20 V (at 25°C): 0.05 µA DC
Device dissipation at 25°C: 250 mW (deratedlinearly to zero at +125°C)
Operating junction temperature: –55°C to +125°CStorage temperature: –55°C to +125°C
APPLICATIONS
• Low phase noise VCOs• Phase locked loop VCOs
Total
CapacitanceCT(pF) at –0 V
min
2.74.26.311.926.0
Total
CapacitanceCT(pF) at –4 Vmin max1.251.702.203.709.00
1.752.503.805.5011.00
Total
CapacitanceCT(pF) at –20 Vmin max0.430.520.680.941.90
0.570.720.961.302.50
Q minat –4 V(50 MHz)1000850700600400
Model NumberSingleGVD30422-001GVD30432-001GVD30442-001GVD30452-001GVD30462-001
CommonCathodeGVD30422-004GVD30432-004GVD30442-004GVD30452-004GVD30462-004
3TOP VIEW30.031TYP0.800.035TYP0.9050.012(SINGLE)12(COMMON CATHODE)0.115 ± 0.0052.93 ± 0.130.0792.010.00.038 ± 0.0030.96 ± 0.0650.0370.950.0370.95PAD LAYOUTCT (pF)5.03.02.0GVD30432-001GVD30452-0010.091 ± 0.0082.3 ± 0.20.051 ± 0.0041.3 ± 0.10.021 ± 0.0030.53 ± 0.080.075 ± 0.0051.91 ± 0.130.040 ± 0.0071.03 ± 0.181.0GVD30422-0010.50.016 ± 0.0020.41 ± 0.04TYP0.30.007 ± 0.0030.18 ± 0.080.0047 ± 0.00130.12 ± 0.033TYP0.512345610203050REVERSE VOLTAGE(VOLTS)SOT-23 PACKAGE - Consult factory for additional package configurations.All dimensions are in /mm.
Unless otherwise specified, the tolerance on dimensions is ±0.004/0.1.
6
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE,WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@spraguegoodman.com元器件交易网www.cecb2b.com
VARACTOR DIODESSG-950
WIDEBAND HYPERABRUPT TUNING VARACTOR DIODES
VHF/UHF Hyperabrupt Series
FEATURES
• Mesa epitaxial silicon construction• High linearity VCOs• Silicon dioxide passivated
• Phase shifters
• Superior wide range linear characteristicsSPECIFICATIONS
• High tuning ratiosReverse breakdown voltage at 10 µA DC • High Q
(at 25°C): 25 V min
• Available in common cathode styleMaximum reverse leakage current at –20 V • Available in chip form (add suffix -000)
(at 25°C): 0.05 µA DC
APPLICATIONS
Device dissipation at 25°C: 250 mW (deratedlinearly to zero at +125°C)
• Low phase noise VCOsOperating junction temperature: –55°C to +125°C• Phase locked loop VCOs
Storage temperature: –55°C to +125°C
Total
Total
CapacitanceCapacitanceQ minModel Number
CT(pF) at –3 VCT(pF) at –25 Vat –4 VCommonmin maxmin max
(50 MHz)
Single
Cathode
9.5 14.5 1.8 2.8 200 GVD30501-001 —9.5 14.5 1.8 2.8 750 GVD30502-001 —26.0 32.0 4.3 6.0 200 GVD30503-001 —26.0 32.0 4.3 6.0 500 GVD30504-001 —3TOP VIEW30.03150.00.80TYP0.0350.90TYP1212(SINGLE)(COMMON CATHODE)0.0792.00.115 ± 0.00510.0GVD30503-0012.93 ± 0.130.038 ± 0.003CT (pF)0.96 ± 0.0650.0370.955.00.091 ± 0.0080.051 ± 0.0040.0372.3 ± 0.21.3 ± 0.10.953.0GVD30502-0012.0PAD LAYOUT0.021 ± 0.0030.075 ± 0.0050.53 ± 0.081.91 ± 0.131.00.040 ± 0.0071.03 ± 0.180.50.30.5120.016 ± 0.0023456102030500.41 ± 0.040.0047 ± 0.0013TYP0.007 ± 0.0030.12 ± 0.033REVERSE VOLTAGE0.18 ± 0.08TYP(VOLTS)SOT-23 PACKAGE - Consult factory for additional package configurations.All dimensions are in /mm.
Unless otherwise specified, the tolerance on dimensions is ±0.004/0.1.
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE,WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@spraguegoodman.com7
元器件交易网www.cecb2b.com
VARACTOR DIODESSG-950
WIDEBAND HYPERABRUPT TUNING VARACTOR DIODES
VHF/UHF Hyperabrupt Series
FEATURES
• Mesa epitaxial silicon construction• Silicon dioxide passivated
• Superior wide range linear characteristics• High tuning ratios• High Q
• Available in common cathode style• Available in chip form (add suffix -000)
• High linearity VCOs• Phase shifters
SPECIFICATIONS
Reverse breakdown voltage at 10 µA DC (at 25°C): 22 V min
Maximum reverse leakage current at –20 V (at 25°C): 0.05 µA DC
Device dissipation at 25°C: 250 mW (deratedlinearly to zero at +125°C)
Operating junction temperature: –55°C to +125°CStorage temperature: –55°C to +125°C
APPLICATIONS
• Low phase noise VCOs• Phase locked loop VCOs
Total
CapacitanceCT(pF) at –4 Vmin maxTotal
CapacitanceCT(pF) at –8 Vmin maxTotal
CapacitanceCT(pF) at –20 Vmin max
Q minat –4 V(50 MHz)
Model Number
Single
CommonCathode
18.0 22.0 7.5 10.5 2.7 3.5 160 GVD30601- 001 —45.0 55.0 18.0 25.0 6.6 9.0 125 GVD30602-001 —100.0120.039.055.014.019.080GVD30603-001—
3TOP VIEW30.031TYP0.800.035TYP0.9050012(SINGLE)12(COMMON CATHODE)0.115 ± 0.0052.93 ± 0.131000.0792.00.038 ± 0.0030.96 ± 0.065500.0370.950.0370.95PAD LAYOUTGVD30602-001GVD30603-0010.091 ± 0.0082.3 ± 0.20.051 ± 0.0041.3 ± 0.1CT (pF)GVD30601-0010.021 ± 0.0030.53 ± 0.080.075 ± 0.0051.91 ± 0.130.040 ± 0.0071.03 ± 0.1810530.5123456102030500.016 ± 0.0020.41 ± 0.04TYP0.007 ± 0.0030.18 ± 0.080.0047 ± 0.00130.12 ± 0.033TYPREVERSE VOLTAGE(VOLTS)SOT-23 PACKAGE - Consult factory for additional package configurations.All dimensions are in /mm.
Unless otherwise specified, the tolerance on dimensions is ±0.004/0.1.
8
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE,WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@spraguegoodman.com元器件交易网www.cecb2b.com
VARACTOR DIODESSG-950MICROWAVE HYPERABRUPT TUNING VARACTOR DIODESSurface Mount Low Parasitic Package (SMLP)FEATURESAPPLICATIONS• Mesa epitaxial silicon construction• PCS• WANS• AMPS• Silicon dioxide passivated• GSM• TAGS• DECT• Fits Footprint for SOD-323, SOD-123 and smaller• Cellular• High frequency (VHF to 8 GHz)SPECIFICATIONS• Available on carrier and reelReverse breakdown voltage at 10 µA DC • Available in chip form (add suffix -000)(at 25°C): 22 V min• Two package styles including lower cost, flat Maximum reverse leakage current at –20 V top version(at 25°C): 0.05 µA DC• Alternate notched termination version available,Device dissipation at 25°C: 250 mW (deratedcontact factory for outline drawinglinearly to zero at +125°C)Operating junction temperature: –65°C to +125°CStorage temperature: –65°C to +125°CTotalTotalTotalCapacitanceCapacitanceCapacitanceQ minCT(pF) at 0 VCT(pF) at –4VCT(pF) at –20 Vat –4VModel typicalmin maxmin max(50 MHz)Number*26.08.7510.801.852.50400GVD92101 – _ _ _14.04.455.500.851.30600GVD92102 – _ _ _7.02.653.300.650.90700GVD92103 – _ _ _5.01.752.200.500.70850GVD92104 – _ _ _3.01.301.650.400.551000GVD92105 – _ _ _2.00.851.100.300.451200GVD92106 – _ _ _*For complete model number, select “Dash No.” from chart below.DashTERMINATIONS (GOLD PLATED)BC1C2DKLMDOT INDICATESNo.ACATHODE ENDB- 0110.100.0500.0350.0500.015 ±0.0040.0300.0700.112D TYPA- 1112.51.30.891.30.38 ±0.10.761.82.84BOTTOM VIEWTOP VIEW- 0120.120.0600.0350.0500.020 ±0.0050.0300.0800.132- 1123.01.50.891.30.51 ±0.10.762.03.35EPOXYK TYPENCAPSULANTC1- 0130.2000.1000.0350.0500.020 ±0.0050.0300.1200.212L- 1135.082.540.891.30.51 ±0.10.763.055.38SIDE VIEW FOR - 01__- 0140.0750.0500.0350.0500.015 ±0.0040.0300.0700.087MEPOXY0.38 ±0.1MOUNTING PAD LAYOUTENCAPSULANTC2- 1141.91.30.891.30.761.82.2- 0150.0620.0420.0300.0500.011 ±0.0030.0200.0600.072SIDE VIEW FOR - 11__- 1151.61.10.761.30.28 ±0.080.511.51.8All dimensions are in /mm.Unless otherwise specified, the tolerance on dimensions is ±0.003/0.08.Note: An SMLP package with three terminations sized to fit the pad layout for an SOT-23 package is also available. Thispackage can be used for multiple diode designs (such as common cathode or common anode). Contact factoryfor the three-terminal SMLP outline drawing, and for further information on the multiple diode configurations.SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE,WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@spraguegoodman.com9
元器件交易网www.cecb2b.com
VARACTOR DIODESSG-950HIGH Q ABRUPT TUNING VARACTOR DIODESFEATURES• Mesa epitaxial silicon construction• Silicon dioxide passivated• Economy price• Mil grade performance• High Q• Available in common cathode style• Available in chip form (add suffix -000)• Phase locked loop VCOs• Moderate bandwidth VCOsSPECIFICATIONSReverse breakdown voltage at 10 µA DC (at 25°C): 30 V minMaximum reverse leakage current at –25 V (at 25°C): 0.05 µA DCDevice dissipation at 25°C: 250 mW (deratedlinearly to zero at +125°C)Operating junction temperature: –55°C to +125°CStorage temperature: –55°C to +125°CCapacitanceRatioCT at 0 VCTat –30 VminAPPLICATIONS• Low phase noise VCOsTotalCapacitanceCT(pF) at –4 V(±10%)Model NumberQ minat –4 V(50 MHz)CommonCathodeSingle1.23.43200GVD1202-001GVD1202-0041.53.53000GVD1203-001GVD1203-0041.83.53000GVD1204-001GVD1204-0042.23.73000GVD1205-001GVD1205-0042.73.72500GVD1206-001GVD1206-0043.33.82500GVD1207-001GVD1207-0043.93.92500GVD1208-001GVD1208-0044.73.92000GVD1209-001GVD1209-0045.64.02000GVD1210-001GVD1210-0046.8 4.0 2000 GVD1211-001 —8.2 4.0 2000 GVD1212-001 —10.0 4.1 1800 GVD1213-001 —12.0 4.1 1600 GVD1214-001 —15.0 4.2 1250 GVD1215-001 —18.0 4.2 1000 GVD1216-001 —22.0 4.2 850 GVD1217-001 —3TOP VIEW30.031TYP0.800.035TYP0.902012(SINGLE)12(COMMON CATHODE)0.115 ± 0.0052.93 ± 0.13100.0792.0GVD1213-0015GVD1211-0010.038 ± 0.0030.96 ± 0.0650.0370.950.0370.95PAD LAYOUT0.091 ± 0.0082.3 ± 0.20.051 ± 0.0041.3 ± 0.1JUNCTION3CAPACITANCE(pF)2GVD1207-001GVD1209-001GVD1203-00110.021 ± 0.0030.53 ± 0.080.075 ± 0.0051.91 ± 0.130.040 ± 0.0071.03 ± 0.180.016 ± 0.0020.41 ± 0.04TYP0.50.007 ± 0.0030.18 ± 0.080.0047 ± 0.00130.12 ± 0.033TYP123456102030REVERSE VOLTAGE(VOLTS)SOT-23 PACKAGE - Consult factory for additional package configurations.All dimensions are in /mm.Unless otherwise specified, the tolerance on dimensions is ±0.004/0.1.10
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE,WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@spraguegoodman.com元器件交易网www.cecb2b.com
VARACTOR DIODESSG-950MICROWAVE ABRUPT TUNING VARACTOR DIODESSurface Mount Low Parasitic Package (SMLP)FEATURESAPPLICATIONS• Mesa epitaxial silicon construction• PCS• WANS• AMPS• Silicon dioxide passivated • GSM• TAGS• DECT• Fits Footprint for SOD-323, SOD-123 and smaller• Cellular• High Frequency (VHF to 8 GHz)SPECIFICATIONS• Available on carrier and reelReverse breakdown voltage at 10 µA DC • Available in chip form (add suffix -000)(at 25°C): 30 V min• Two package styles including lower cost, flat Maximum reverse leakage current at –25 V top version(at 25°C): 0.05 µA DC• Alternate notched termination version available,Device dissipation at 25°C: 250 mW (deratedcontact factory for outline drawinglinearly to zero at +125°C)Operating junction temperature: –65°C to +125°CStorage temperature: –65°C to +125°CCapacitanceCapacitanceTotalRatioRatioCapacitanceCTat 0 VCTat –4 VQ minCT(pF) at –4 VCTat –4 VCTat –30 Vat –4 VModel(±10%)minmin(50 MHz)Number*0.81.51.453900GVD91300– _ _ _1.01.61.553800GVD91301– _ _ _1.21.71.603700GVD91302– _ _ _1.51.81.653600GVD91303– _ _ _1.81.91.703500GVD91304– _ _ _2.22.01.753400GVD91305– _ _ _2.72.01.803300GVD91306– _ _ _3.32.11.853100GVD91307– _ _ _3.92.11.902700GVD91308– _ _ _4.72.21.952600GVD91309– _ _ _5.62.22.002500GVD91310– _ _ _*For complete model number, select “Dash No.” from chart below.DashTERMINATIONS (GOLD PLATED)No.ABC1C2DKLMDOT INDICATESCATHODE ENDB- 0110.100.0500.0350.0500.015 ±0.0040.0300.0700.112D TYPA- 1112.51.30.891.30.38 ±0.10.761.82.84BOTTOM VIEWTOP VIEW- 0120.120.0600.0350.0500.020 ±0.0050.0300.0800.132- 1123.01.50.891.30.51 ±0.10.762.03.35EPOXYK TYPENCAPSULANTC1- 0130.2000.1000.0350.0500.020 ±0.0050.0300.1200.212L- 1135.082.540.891.30.51 ±0.10.763.055.38SIDE VIEW FOR - 01__- 0140.0750.0500.0350.0500.015 ±0.0040.0300.0700.087MEPOXY0.38 ±0.1MOUNTING PAD LAYOUTENCAPSULANTC2- 1141.91.30.891.30.761.82.2- 0150.0620.0420.0300.0500.011 ±0.0030.0200.0600.072SIDE VIEW FOR - 11__- 1151.61.10.761.30.28 ±0.080.511.51.8All dimensions are in /mm. Unless otherwise specified, the tolerance on dimensions is ±0.003/0.08.Note: An SMLP package with three terminations sized to fit the pad layout for an SOT-23 package is also available. Thispackage can be used for multiple diode designs (such as common cathode or common anode). Contact factoryfor the three-terminal SMLP outline drawing, and for further information on the multiple diode configurations.SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE,WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@spraguegoodman.com11
元器件交易网www.cecb2b.com
VARACTOR DIODESSG-950MINIATURE MICROWAVE SILICON VARACTOR DIODESSurface Mount Monolithic Package (SMMP)FEATURES• Multilayer construction• Low SMT profile• Low series inductance• Low parasitic capacitance (0.06 pF)• High Q• Available on carrier and reelAPPLICATIONSMicrowave Voltage Controlled Oscillators (VCOs)Ideal for Wide Bandwidth Applications (VHF-10 GHz)SPECIFICATIONSReverse breakdown voltage at 10 µA DC (at 25°C): See belowMaximum reverse leakage current at –10 V (at 25°C): 0.05 µA DCOperating junction temperature: –65°C to +125°CStorage temperature: –65°C to +125°CCapacitanceRatioCTat –1 VCTat –3 Vmin max1.42.2CapacitanceRatioCTat –1 VCTat –6 Vmin max2.63.6TotalCapacitanceCT(pF) at –1 Vmin max2.63.8Q minat –4 V(50 MHz)1500ModelNumberGVD60100 Reverse breakdown voltage at 10 µA DC: 15 V minTotalCapacitanceCT(pF) at –0 Vtypical3.25TotalCapacitanceCT(pF) at –4 Vmin max0.91.5TotalCapacitanceCT(pF) at –20 Vmax max0.20.45Q minat –4 V(50 MHz)1000Model NumberGVD60200Reverse breakdown voltage at 10 µA DC: 22 V minModels shown above supplied bulk in vials.For 300 pc gel pack, add “-03\" to the model number.For 5000 pc carrier and reel, add “-50\" to the model number.MARKING FORCATHODE END0.0190.480.0401.02TOP VIEW0.0150.38SIDE VIEW0.0200.51GOLD METALIZEDPADS (2 PLACES)BOTTOM VIEW0.0110.280.0160.410.0120.30All dimensions are in /mm.Unless otherwise specified, the tolerance on dimensions is ±0.004/0.1.12
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE,WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@spraguegoodman.com© 2000 SPRAGUE-GOODMAN ELECTRONICS, INC., ALL RIGHTS RESERVED.
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