Cleaning liquid used in process for forming dual d

专利名称：Cleaning liquid used in process for forming

dual damascene structure and a process fortreating substrate therewith

发明人：Shigeru Yokoi,Kazumasa Wakiya申请号：US11473030申请日：20060623

公开号：US20060241012A1公开日：20061026

摘要：It is disclosed a cleaning liquid used in a process for forming a dual damascenestructure comprising steps of etching a low dielectric layer (low-k layer) accumulated ona substrate having thereon a metallic layer to form a first etched-space; charging asacrifice layer in the first etched-space; partially etching the low dielectric layer and thesacrifice layer to form a second etched-space connected to the first etched-space; andremoving the sacrifice layer remaining in the first etched-space with the cleaning liquid,wherein the cleaning liquid comprises (a) 1-25 mass % of a quaternary ammoniumhydroxide, such as TMAH and choline, (b) 30-70 mass % of a water soluble organicsolvent, and (c) 20-60 mass % of water. The cleaning liquid attains in a well balancedmanner such effects that a sacrifice layer used for forming a dual damascene structure isexcellently removed, and a low dielectric layer is not damaged upon formation of ametallic wiring on a substrate having a metallic layer (such as a Cu layer) and the lowdielectric layer formed thereon.

申请人：Shigeru Yokoi,Kazumasa Wakiya

地址：Kanagawa-ken JP,Kanagawa-ken JP

国籍：JP,JP

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