PD - 9.1071
IRGBC30KINSULATED GATE BIPOLAR TRANSISTOR
Features
• Short circuit rated - 10µs @ 125°C, VGE = 15V• Switching-loss rating includes all \"tail\" losses
• Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve
GECShort Circuit Rated
UltraFast IGBT
VCES = 600VVCE(sat) ≤ 3.8V
@VGE = 15V, IC = 14A
n-channelDescription
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier havehigher usable current densities than comparable bipolar transistors, while atthe same time having simpler gate-drive requirements of the familiar powerMOSFET. They provide substantial benefits to a host of high-voltage, high-current applications.
These new short circuit rated devices are especially suited for motor controland other applications requiring short circuit withstand capability.
TO-220ABMax.
6002314464610±201010042
-55 to +150
Absolute Maximum Ratings
VCES
IC @ TC = 25°CIC @ TC = 100°CICMILMtscVGEEARV
PD @ TC = 25°CPD @ TC = 100°CTJTSTG
Parameter
Collector-to-Emitter VoltageContinuous Collector CurrentContinuous Collector CurrentPulsed Collector Current
Clamped Inductive Load Current Short Circuit Withstand TimeGate-to-Emitter Voltage
Reverse Voltage Avalanche Energy Maximum Power DissipationMaximum Power DissipationOperating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.Mounting torque, 6-32 or M3 screw.
Units
VA
µsVmJW
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
RθJCRθCSRθJAWt
ParameterJunction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mountWeight
Min.
————
Typ.
—0.50—2 (0.07)
Max.
1.2—80—
Units
°C/Wg (oz)
Revision 1
C-843
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IRGBC30KC-844
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Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
Fig. 2 - Typical Output CharacteristicsFig. 3 - Typical Transfer Characteristics
C-845
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IRGBC30K
Fig. 4 - Maximum Collector Current vs.
Case TemperatureFig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature
C-846
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IRGBC30K
C-847
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C-848
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