专利名称：Process for patterning local interconnects发明人：Thomas C. Holloway,Thomas E. Tang,Che-Chia Wei,Roger A. Haken,David A. Bell
申请号：US06/837468申请日：19860307公开号：US04657628A公开日：19870414
摘要：A local interconnect system for VLSI integrated circuits. After titanium isdeposited for self-aligned silicidation of exposed moat and gate regions in a nitrogenatmosphere, a hardmask is deposited and patterned over the titanium. When a
conductive titanium nitride layer is formed overall, it will already be patterned accordingto this hardmask.
申请人：TEXAS INSTRUMENTS INCORPORATED
代理人：Robert Groover, III,James T. Comfort,Melvin Sharp
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