SHORT CHANNEL TRENCH POWER MOSFET

专利名称：SHORT CHANNEL TRENCH POWER MOSFET发明人：KNOLL, Lars,MINAMISAWA, Renato申请号：EP17733450.5申请日：20170627公开号：EP3479410A1公开日：20190508

摘要：The power semiconductor device according to the invention is a trench powerfield effect transistor, at all locations within a channel region a first local doping

concentration is less than 1·10 cm. In the base layer a second local doping concentrationis at least 1·10 cm at all locations within the base layer. In the invention a channel lengthL, fulfils the following inequation: (I), wherein ε is a permittivity of the channel region, εis apermittivity of the gate insulation layer, is a thickness of the channel region in a directionperpendicular to an interface between the gate insulation layer and the channel region,and is a thickness of the gate insulation layer in a direction perpendicular to the interfacebetween the gate insulation layer and the channel region.

申请人：ABB Schweiz AG

地址：Brown Boveri Strasse 6 00 Baden CH

国籍：CH

代理机构：Kuhnen & Wacker Patent- und Rechtsanwaltsbüro PartG mbB

更多信息请下载全文后查看