PDV-P9003-1资料

CdS Photoconductive Photocells

PDV-P9003-1

PACKAGE DIMENSIONS INCH [mm]PACKAGE DIMENSIONS INCH [mm] +.015 [0.38]-.010 [0.25]±.010 [0.25] EPOXY ON LEADS 3 mm MAX.079 [2.00].138 [3.50] 2X Ø.016 [0.40] .100 [2.] PLASTICCOATED±.010 [0.25] Ø.165 [4.19] 2X 1.023 [26.0] CERAMIC PACKAGE FEATURES DESCRIPTION APPLICATIONS • Visible light response • Sintered construction • Low cost MIN MAX UNITS 150 90 +75 +260 V mW/°C °C °C Resistance in Kohms ABSOLUTE MAXIMUMRATING SYMBOL PARAMETER Vpk Applied Voltage Pd Δpo/Δt TO The PDV-P9003-1 are (CdS), Photoconductive • Camera exposure photocells designed to sense light from 400 to 700 • Shutter controls nm. These light dependent resistors are available in • Night light Controls a wide range of resistance values. They’re packaged in a two leaded plastic-coated ceramic header. CELL RESISTANCEVS. ILLUMINANCE (TA)=23°CUNLESSOTHERWISENOTED 1000100Continuous Power Dissipation 10Operating and Storage Temperature -30 TS Soldering Temperature* 1 * 0.200 inch from base for 3 seconds with heat sink. 110Illuminance in lux 100 ELECTRO-OPTICALCHARACTERISTICSRATING(TA)=23°CUNLESSOTHERWISENOTED SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP RD Dark Resistance After 10 sec. @ 10 Lux @ 2856 °K 1 RI Illuminated Resistance 23 10 Lux @ 2856 °K S lrange lpeak tr Tf LOG(R100)-LOG(R10)** LOG(E100)-LOG(E10)*** Spectral Application Range Flooded Spectral Application Range Flooded Rise Time 10 Lux @ 2856 °K Fall Time After 10 Lux @ 2856 °K Sensitivity MAX 33 UNITS MW KW W/Lux nm nm ms ms 0.85 400 700 520 60 25 **R100, R10: cell resistances at 100 Lux and 10 Lux at 2856 °K respectively . ***E100, E10: luminances at 100 Lux and 10 Lux 2856 °K respectively. Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. REV 3/30/06