PDV-P9003-1;中文规格书,Datasheet资料

PDV-P9003-1

FEATURES DESCRIPTION APPLICATIONS • Visible light response • Sintered construction • Low cost ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL PARAMETER MIN MAX UNITS Vpk TO TS Applied Voltage 150 V Pd ∆po/∆t Continuous Power Dissipation Soldering Temperature* The PDV-P9003-1 are (CdS), Photoconductive • Camera exposure photocells designed to sense light from 400 to 700 • Shutter controls nm. These light dependent resistors are available in • Night light Controls a wide range of resistance values. They’re packaged in a two leaded plastic-coated ceramic header. CELL RESISTANCE VS. ILLUMINANCE Operating and Storage Temperature -25 125 mW/°C +75 °C +260 °C * 0.200 inch from base for 3 seconds with heat sink. ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP RD Dark Resistance After 10 sec. @ 10 Lux @ 2856 °K 1 RI Illuminated Resistance 23 10 Lux @ 2856 °K S lrange lpeak tr Tf LOG(R100)-LOG(R10)** LOG(E100)-LOG(E10)*** Spectral Application Range Flooded Spectral Application Range Flooded Rise Time 10 Lux @ 2856 °K Fall Time After 10 Lux @ 2856 °K Sensitivity 400 MAX 33 UNITS MW KW W/Lux nm nm ms ms 0.85 570 60 25 700 Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com http://oneic.com/

**R100, R10: cell resistances at 100 Lux and 10 Lux at 2856 °K respectively . ***E100, E10: luminances at 100 Lux and 10 Lux 2856 °K respectively. Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. ©2011 Advanced Photonix, Inc. All rights reserved. REV 10/17/11

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