CR03高压灵敏触发单向可控硅晶闸管

SILICON CONTROLLED RECTIFIERS

DESCRIPTION

PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers,small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.

AKGSCHEMATIC SYMBOLFEATURES

•Sensitive gate allows triggering by micro controllers and other logic circuits•Blocking voltage to 800V

•On-state current rating of 1.2ARMS at 80°C•High surge current capability–12A

•Minimum and maximum values of IGT, VGT and IH specified for ease of design•Immunity to dV/dt–20V/μsec minimum at 110°C

•Glass-passivated surface for reliability and uniformity

GAKTO-92 PACKAGEABSOLUTE MAXIMUM RATINGS(TJ= 25°C UNLESS OTHERWISE SPECIFIED)

SymbolVDRMIT(AV)IT(RMS)ITSMI2tPGMPG(AV)IFGMVRGMTJTSTG

Parameter

RepetitivePeakOff-StateVoltageAverageOn-StateCurrentR.M.SOn-StateCurrentSurgeOn-StateCurrent

I tforFusing

ForwardPeakGatePowerDissipationForwardAverageGatePowerDissipation

ForwardPeakGateCurrentReversePeakGateVoltageOperatingJunctionTemperature

StorageTemperature

2

ConditionRatings800

UnitsVAAAA2sWWAV°C°C

HalfSineWave:TC=74°CAllConductionAngle

1/2Cycle,60Hz,SineWaveNon-Repetitive

t=8.3ms

1.01.2100.720.50.115-40~150-40~150

THERMAL RESISTANCES

SymbolRth(j-c)Rth(j-a)

JunctiontoCaseJunctiontoAmbient

Parameter

TO-92TO-92

Value70180

Unit°C/W°C/W

05081.R11 2/11REV.1205B2Page 1Page 1www.protekdevices.comwww.semiwill.comELECTRICAL CHARACTERISTICS( TC = 25 °C UNLESS OTHERWISE NOTED )

Symbol

Items

Conditions

VAK=VDRMorVRRM;RGK=1000ohmTC=25°C

TC=125°C

(ITM=1A,Peak)

VAK=6V,RL=100ohm,TC=25°C,

TC=-40°CVD=7V,RL=100ohm,TC=25°C,

TC=-40°CVAK=12V,RL=100ohm,TC=125°CVD=RatedVDRM,Exponentialwaveform,

RGK=1000ohm,TJ=125°CIPK=20A;di/dt=1A/uS;Igt=20mA

VAK=12V,GateOpenInitiatingCurent=20mATC=25°C

TC=-40°C

Ratings

Min.───────0.220───

Typ.──1.2─────35─2─

Max.102001.72005000.81.2──505.010

uAVVV/uSA/uSmAUnit

IDRMVTMIGTVGTVGDdv/dtdi/dtIH

RepetitivePeakOff-StateCurrent

PeakOn-StateVoltage(1)GateTriggerCurrent(2)GateTriggerVoltage(2)Non-TriggerGateVoltage(1)CriticalRateofRiseOff-StateVoltageCriticalRateofRiseOff-StateVoltage

HoldingCurrent

uAV

Notes:

1.PulseWidth≤1.0ms,Dutycycle≤1%2. Does not include RGKin measurement

VOLTAGE CURRENT CHARACTERISTIC OF SCR

PARAMETERPeakRepetitiveOffStatForwardVoltagePeakForwardBlockingCurrentPeakRepetitiveOffStateReverseVoltagePeakReverseBlockingCurrentPeakOnStateVoltageHoldingCurrentSYMBOLVDRMVTM+CurrentAnode+IDRMIRRMat VRRMOn StateIHVRRMIRRMVTMIHReverse BlockingRegion(off state)Reverse AvalancheRegion Anode-+VoltageIDRMat VDRMForward BlockingRegion(off state)05081.R11 2/11REV.1205B2Page 2Page 1www.protekdevices.comwww.semiwill.com©SEMIWILLPACKAGE MECHANICAL DATA

05081.R11 2/11REV.1205B2Page 3Page 1www.protekdevices.comwww.semiwill.com