专利名称：Capacitor of semiconductor device and
method of fabricating the same
发明人：Ki Min Lee申请号：US11588538申请日：20061026
公开号：US20070096192A1公开日：20070503
专利附图：
摘要：Disclosed are a capacitor of a semiconductor device and a method of fabricatingthe same. The capacitor includes a capacitor top electrode, a capacitor bottom electrodealigned with a bottom surface and three lateral sides of the capacitor top electrode, and
a capacitor insulating layer between the capacitor top electrode and the capacitorbottom electrode.
申请人：Ki Min Lee
地址：Cheongju-si KR
国籍：KR
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